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HOME > WG35165SP
Wavice, GaN, Packaged TR, 웨이비스

WG35165SP

165W GaN power transistor for Infrastructure applications at frequencies from 3400 MHz to 3600 MHz.

  • GaN-on-SiC
  • Enhanced ruggedness
  • High efficiency
  • Excellent thermal stability
  • Input pre-matched
Peak Output Power(Psat)165W
Operating Voltage50V
Operation Frequency3400MHz~3600MHz
Power Added Efficiency38.5% @ Pavg(PAR7.5dB)
Power Gain17dB
ApplicationTelecom
Overview

Applications

Infrastructure transmitter applications in the 3400 MHz to 3600 MHz frequency range.

Ordering
Documentation
Design Support

Tel: 031-260-8600

Fax: 031-260-8699

E-mail: sales@wavice.com

Address: 46, Samsung 1-ro 5-gil, Hwaseong-si, Gyeonggi-do, Korea

  • Products
    • GaN HEMT Die
    • Packaged GaN TR
    • Modules
  • Services
    • GaN Foundry Service
  • Applications
    • Aerospace and Defense
    • Network Infrastructure
    • ISM and Broadcast
    • RF Energy
  • Company
  • Support
    • Where to buy
  • Contact us
    • Business & Sales
    • Careers
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